Download New Technological Developments at CNM

New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
New Technological
Developments at CNM
Virginia Greco, Salvador Hidalgo
on behalf of the IMB-CNM Radiation Detectors Group
Instituto de Microelectrónica de Barcelona (IMB)
Centro Nacional de Microelectrónica (CNM-CSIC)
Barcelona, Spain
Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
for: Design, simula-on, fabrica-on and test of radia-on detectors High Energy Physics 3D - Combined powder diffraction images
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Medical Imaging Nuclear Physics Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
New Technological Developments. Outline
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3D Technology Detectors 2D Posi3on sensi3ve Microstrip Sensors with Charge Division Low Gain Avalanche Detectors (LGAD) 6 inch Technological Process Silicon Microdosimeters for Hadrontherapy Ultra-­‐Thin Neutron Sensors for High Gamma Rejec3on High Efficiency Drilled Neutron Sensors Embedded Pitch Adapters (E-­‐PA) Low Resistance Strip Sensors Micro-­‐channel Cooling Automated Layout Genera3on Flip-­‐Chip Packaging Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
3D Technology Detectors
o  3D technology used for the fabrica3on of detectors for the ATLAS Insertable b-­‐layer (IBL) ü  72 wafers produced and tested at CNM before and aSer UBM. o  New developments: ü  More advanced technologies for new 3D detectors Ø  Thin; slim edges; charge mul3plica3on; trenches. Contact Person: Giulio Pellegrini Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
3D Technology Detectors
Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
3D Technology Detectors
o  IBL Produc3on: ü  50 % of IBL 3D sensors fabricated at CNM ü  255 detectors delivered to IZM for the UBM and flip chip ü  Common layout within the ATLAS 3D collabora3on ü  Sensors produced for the geometry of the FE-­‐I4 chip Ø  50 µm x 250 µm Ø  210 µm columns in 230 µm p-­‐bulk Ø  Inac3ve edges of ~ 200 µm ü  Extensive characteriza-on and tes-ng on-­‐going at IFAE on un-­‐irradiated and irradiated up to 5.11x1015 neq/cm2 devices Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
3D Technology Detectors
o  CNM devices tested in CERN testbeam : ü  Efficiencies > 97 % aOer irradia-on Ø  Pixel efficiency map: fold efficiency to 1 (±0.5) pixel (match track in 3x3 pixel window) Ø  CNM55: un-­‐irradiated, 0 deg incidence, HV = 20 V, Eff = 99.4 % Ø  CNM81: n-­‐irradiated, 0 deg incidence, HV = 160 V, Eff = 97.5 % Ø  CNM34: p-­‐irradiated, 15 deg incidence, HV = 160 V, Eff = 98.9 % Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
2D Position sensitive Microstrip Sensors with Charge Division
o  Charge division in microstrips: ü  Long microstrip ladders (several tens of cen3meters) proposed for the ILC tracking detectors. ü  Gejng the par3cle hit coordinate along the strip using the charge division method. à two coordinates at the same 3me ü  Avoid the complexity of double sided sensors and the addi3onal material of a second layer of sensors S
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o  Simple single-­‐side AC-­‐coupled microstrip detectors with resis3ve coupling electrodes ü  X-­‐coordinate: cluster-­‐finding algorithms for strip detectors. ü  Y-­‐coordinate: resis-ve charge division method ü  Resis3ve material: high doped polysilicon ü  Electrode resistance >> preamplifier impedance Centro Nacional de Microelectrónica
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Aluminium
S1=f(y)
S2=f(L-­‐‑y)
​𝑦/𝐿 =​𝐴↓2 /​
𝐴↓1 +​𝐴↓2 S2
Contact Person: Giulio Pellegrini Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
2D Position sensitive Microstrip Sensors with Charge Division
o  Test Beam: Spa3al Resolu3on: ü  Coordinate X ∼ 25 mm (pitch/√12= 23 mm) ü  Coordinate Y ∼ 1.7 mm ( 8.5% strip length) Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
2D Position sensitive Microstrip Sensors with Charge Division
o  Isola3on structures for cross-­‐talk suppression: Poly-Si
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Al Poly-Si Al
NEW DESIGN Common p-­‐stop and field plates p++
Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Low Gain Avalanche Detectors (LGAD)
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Tracking Detectors
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PiN diodes à 
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Propor-onal Response Good efficiency Good spectral range Segmenta-on is technologically available (strip and pixel detectors). à  ASer Irradia3on: û  Worse signal to noise ra-o (lower quality signal + noise increment) û  Increment of the power consump3on û  Radia-on damage (specially relevant on n-­‐
on-­‐p structures) Low Gain Avalanche Detectors (LGAD) à  Propor-onal Response (linear mode opera3on) à  Good efficiency à  Good spectral range ü  Beser Sensibility ü  Thin detector integra3on with the same signal and higher collec3on efficiency ü  BeXer signal/noise ra-o à ASer Irradia3on ü  Similar pre & post irradia-on signal (higher quality signal + lower noise increment) ü  L o w e r i n c r e m e n t o f t h e p o w e r consump3on û  Radia3on Damage (specially relevant on n-­‐on-­‐p structures) Contact Person: Salvador Hidalgo Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Low Gain Avalanche Detectors (LGAD)
o  The goal: a diode with mul-plica-on working in linear mode (propor3onal response). o  Star3ng point : PiN-­‐pad diode with an area of 5mm x 5mm.   Structure: highly resis3ve p-­‐type substrate   n+ and p+ diffusions for the electrodes   p diffusion under the cathode ⇒ enhance electric field => mul-plica-on layer
  Lowly doped N-­‐type Deep diffusion (JTE) around the curvature of the main junc3on Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Low Gain Avalanche Detectors (LGAD)
o  Charge collec-on measurements of MIPs with 90Sr source 300000
Performed at the “Jozef Stefan” Institut, in Ljubljana, Slovenia
LGADs
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Before irradia3on: Improvement of signal à a factor ~ 10 at 300V 400
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Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
6 inch Technological Process
ü  First PiN Diodes On 6 Inch Wafers Centro Nacional de Microelectrónica
Contact Person: Manuel Lozano Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
6 inch Technological Process
o  First Results: ü  Good electrical performances ü  Comparable to 4 inch technology PiN diodes Run 7031
PiN Diodes -­‐‑ 6 inches wafer -­‐‑ I -­‐‑V Curves
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New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Silicon Microdosimeters for Hadrontherapy
Microdosimetry
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HeLa cell
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o  Cylindrical structures that completely confine the ac3ve volume – “cell-­‐like” ü  P+ implanted electrode surrounded by N+ cylindrical 3D electrode (trench) ü  SOI wafer with backside removed to avoid backscasered par3cles o  Array of independent ac3ve volumes with individual (pixel) or serial (strip) readout – spa3al resolu3on o  Measure energy deposi3on in microscopic (cellular) volumes o  Applica3ons: ü  Treatment planning in hadrontherapy ü  Biological risk assessment for radia3on-­‐exposed people ü  Microelectronics (SEUs) Centro Nacional de Microelectrónica
Contact Person: Celeste Fleta Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Silicon Microdosimeters for Hadrontherapy
10 µm
Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Ultra-Thin Neutron Sensors for High Gamma Rejection
Medidas linac hospital Santiago de Compostela
Cuentas/min
o  Neutron Silicon Detectors for on-­‐line par-cle coun-ng o  Ultrathin Sensor (10µm) for gamma ray high rejec3on, beser rejec3on than commercial sensors o  10B Layer for neutron conversion ü  Applica3ons: dosimetry for radiotherapy, space explora3on, avionics, homeland security ü  CNM technologies protected by several patents 140
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Contact Person: Celeste Fleta Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
High Efficiency Drilled Neutron Sensors
o  P-­‐N junc3on trenches in silicon bulk, filled with 6LiF o  More efficient than the planar structure because of the increase of the Si-­‐converter contact surface Geant4
Contact Person: Celeste Fleta Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Embedded Pitch Adapters (E-PA)
o  Proposal: ü  Second metal to implement fan-­‐ins built in the detector ü  Solu3on to large bonding angle without the drawbacks of external pitch adaptors ü  Increased produc3on speed and yield o  Several design op3miza3on criteria: ü  Minimize cross-­‐talk and pick-­‐up ü  Minimize interstrip capacitance/noise ü  Equalize capacitance/noise among channels ü  Efficiency, yield, … o  Cross-­‐talk tests: ü  Laser tests (IFIC) ü  Signal readout in every channel ü  No signal seen in crossing channels Contact Person: Miguel Ullan Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Low Resistance Strip Sensors
o  Mo3va3on: ü  In the scenario of a beam loss there is a large charge deposi3on in the strip sensor bulk and coupling capacitors can get damaged. ü  Punch-­‐Through Protec3on (PTP) structures used at strip end to develop low impedance to the bias line and evacuate the charge. o  Problem: ü  Measurements with a laser pulse showed that the protec3ons work well when the charge is injected at the “near” end of the strip, but not when the charge is injected at the “far” end. o  Proposed Solu3on: ü  To reduce the resistance of the strips: “Low-­‐R strip sensors” ü  Deposi3on of Aluminum on top of the implant (first metal) before the coupling capacitance is defined (second metal). Contact Person: Miguel Ullan Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Low Resistance Strip Sensors
Laser measurements (far)
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ü  Vfar = Vnear ü  A plateau is observed for both near and 6958_w02_s2d
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far laser injec3ons on Vfar and on Vnear. ü  When laser is fired on the near side, plateu is seen aSer 100 V bias. For the far side case, plateu is observed aSer 120 V. 300
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Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Micro-Channel Cooling
o  Objec3ve: ü  Reduce the mass of the cooling systems ü  Cool only the detectors increases efficiency o  Technology being developed: ü  Micro-­‐channel genera3on Ø  Deep Reac3ve Ion Etching (DRIE) ü  Wafer bonding Ø  Anodic bonding (Si-­‐SiO2) Ø  Fusion bonding (Si-­‐Si) Ø  Eutec3c bonding (Metal-­‐Metal) o  Fluidics o  Cooling Power Contact Person: Miguel Ullan Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Automatic Layout Generation
o  Fast and efficient automa3zed layout genera3on with Glade/Python: ü  Freeware IC layout editor: Glade (Gds, Lef And Def Editor) by Peardrop Design Systems capable of reading GDS2, OASIS, LEF and DEF plus a few other formats. Currently available for Windows, Linux, Mac OS X and Solaris. ü  Glade is extendable using Python scrip3ng and parameterized cells (Pcells). ü  We can design complex layout using a complete library of simple parameterized func3ons. o  Full sensor layout genera3on: ü  Strip rows genera3on ü  Stereo angle ü  Bonding pads ü  Bias resistors ü  Bias and guard rings Contact Person: Miguel Ullan Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
VI CPAN Days. Sevilla, October 20th-22th, 2014
Flip-Chip Packaging
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Sn/Ag and Sn/Pb bump electropla3ng TiW/Cu UBM electropla3ng Ni/Au UBM electroless SET FC150 Pick & Place Pixel Detectors packaging
Contact Person: Enric Cabruja Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
New Technological Developments at CNM
o  IMB-­‐CNM Radia-on Detectors Group: ü  Manuel Lozano ü  Enric Cabruja ü  David Flores ü  Salvador Hidalgo ü  Miguel Ullan ü  Joan Marc Rafi ü  Giulio Pellegrini ü  Angel Merlos ü  Celeste Fleta ü  David Quirion ü  Virginia Greco ü  Daniela Bassignana ü  Pablo Fernandez-­‐Mar3nez ü  Victor Benitez ü  Marta Baselga ü  Sergi Esteban ü  Carlos Jumilla Centro Nacional de Microelectrónica
VI CPAN Days. Sevilla, October 20th-22th, 2014
Thank you for your aXen-on !!!! Instituto de Microelectrónica de Barcelona