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Actividades de I+D en IGFAE/USC Pablo Vázquez (IGFAE-USC) IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009 R&D activities at Santiago R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60) FTD simulations Personnel dedicated: 5 FTE Pablo Vázquez, Abraham Gallas, Daniel Esperante, Jevgenij Visniakov, Eliseo Pérez, Javier Caride IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 1 R&D in pixel detectors CERN + LHCb + Timepix/Medipix collaboration 2 test beams summer 2009 at CERN Telescope (6) + DUT made with Timepix 55 um pixel size 300 um thickness Hit resolution ~5 um Track resolution ~2.6 um IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 2 R&D in pixel detectors Timepix/Medipix collaboration is working in adapting the Timepix ASIC for HEP experiments Since we have obtained very good results in testbeams The LHCb VELO upgrade group has decided to choose the timepix as baseline pixel solution b) LHCb + Timepix/Medipix has decided to build an upgraded version of the Timepix telescope a) IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 3 R&D in pixel detectors a) USC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors 2D sensors thinned up to 200, 150 and 100 um To be readout with the Timepix and characterized as function of the thickness Charge sharing Efficiency Time of arrival measurements Sensors are being produced now Bumpbonding tryout also in the CNM Possible design variations under discussion Elongated pixels at 1st row, edgless, gard rings IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 4 R&D in pixel and microstrips silicon sensors b) Telescope based on Timepix with following characteristics Active area: 2.8x2.8 cm2 Resolucion: 2 um, 1 ns Readout rate: 75 kHz To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USC Timing Unit, integration of the DUT daq in the DAQ of the telescope Mechanics of the DUT Cold box to work with irradiated sensors in the test beam IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 5 R&D in microstrips silicon detectors In case the pixel option cannot meet the physics and time scale requirements, the silicon strip option should hold for LHCb VELO upgrade The strip option should stay as close as possible to the current design improving its performance 40 MHz readout Higher granularity (x10 luminosity increase) Impact Parameter resolution Radiation hardness USC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERN Very useful for the FTD conception of ILC IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 6 R&D in microstrips silicon detectors 1 module assembled in Santiago to be tested in the lab and in testbeam IT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsu sensor IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 7 DEPFET: Belle II PXD PS system 22 x half-module 50cm IV jornadas FLC, Madrid, 2-3 Dec 2009 44 half-modules 17 voltages per half-module Regulation cards on radiation and B-field enviroment 2m P. Vázquez 8 DEPFET: Belle II PXD PS system Belle layout 750 voltages ~krad + H field 1500 lines Regul. DHH DHH Regul. PXD PS > 500W IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez PS Electronics hut No radiation 9 DEPFET: sensor characterization Lab test Gain (radioactive source), charge collection (laser) Dependence with radiation 241Am source on a PXD5 matrix IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 10 DEPFET: sensor characterization Testbeams TB09 data taking and analysis Future testbeams Irradiated module Power supply prototype IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 11 DEPFET: 2009 test beam analysis Eutelescope framework installed, some procesors working IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 12 Gamma irradiation Failed depfet PXD5 module irradiation this summer Module dead before irradiation PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10Mrad PXD6 matrices will be irradiated next year IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 13 ASIC development In collaboration with Grupo de Vision Artificial at USC a project was submitted to Xunta de Galicia to produce in Tezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications CMOS 3D 130nm technology 64x64 pixels of 40x40 um pixel size 4 layers Sensor: pn diode Signal conditioning: amplification, test pulse, comparator Signal processing: time stamping, counter, time over threshold, 8bit memory Readout Possible incorporation to R&D for FLC project in 2013 IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 14 Summary on R&D activities in the USC R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60) FTD simulations IV jornadas FLC, Madrid, 2-3 Dec 2009 P. Vázquez 15