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A new era of pixel detectors for future High Energy Physics experiments Sonia Fernandez-Perez Workshop física teorica UVA– 27.05.2016 1 Outline § § § § TheLargeHadronCollider(LHC) TheATLASdetector TheHL-LHCprogram Basicworkingprincipleandchallengesofpixeldetectors § PixeldetectorsdevelopmentsforATLASatHL-LHC Workshop física teórica UVA - Sonia Fernandez-Perez 2 TheLargeHadronCollider § TheStandardModeldescribesallelementaryparFclesandtheirinteracFons § Itisincomplete(noexplanaFontogravitaFonalinteracFons,darkmaIer,asymmetry maIer-anFmaIer,etc) Workshop física teórica UVA - Sonia Fernandez-Perez 3 TheLargeHadronCollider § TheStandardModeldescribesallelementaryparFclesandtheirinteracFons § Itisincomplete(noexplanaFontogravitaFonalinteracFons,darkmaIer,asymmetry maIer-anFmaIer,etc) proton-protoncollider 27kmcircumference 100munderground During the first data taking period Run 1 (2009-2012) luminosity of 1034 cm-2s-1, collision energy of 7-8 TeV, and 50 ns bunch crossing. § 4mainexperiments:ALICE,ATLAS,CMS,LHCb § § § § 5 km Workshop física teórica UVA - Sonia Fernandez-Perez 4 TheLargeHadronCollider § TheStandardModeldescribesallelementaryparFclesandtheirinteracFons § Itisincomplete(noexplanaFontogravitaFonalinteracFons,darkmaIer,asymmetry maIer-anFmaIer,etc) § § § § proton-protoncollider 27kmcircumference 100munderground 4mainexperiments:ALICE,ATLAS,CMS,LHCb CMS 5 km ALICE ATLAS Workshop física teórica UVA - Sonia Fernandez-Perez LHCb 5 TheLargeHadronCollider § TheStandardModeldescribesallelementaryparFclesandtheirinteracFons § Itisincomplete(noexplanaFontogravitaFonalinteracFons,darkmaIer,asymmetry maIer-anFmaIer,etc) § § § § Higgsdiscovery(2012) proton-protoncollider 27kmcircumference 100munderground 4mainexperiments:ALICE,ATLAS,CMS,LHCb CMS 5 km ALICE ATLAS Workshop física teórica UVA - Sonia Fernandez-Perez LHCb 6 IntroducFonTheATLASdetector MuonDetector ElectromagneFc Calorimeter InnerDetector HadronicCalorimeter Workshop física teórica UVA - Sonia Fernandez-Perez 7 IntroducFonTheATLASdetector InnerDetector Workshop física teórica UVA - Sonia Fernandez-Perez 8 IntroducFonThePixelDetector • ThePixelDetectorisexposedtothe harshestcondiFons • 4silicondetectorlayers InsertableB-Layer(IBL)installedin2014 Workshop física teórica UVA - Sonia Fernandez-Perez 9 IntroducFonThePixelDetector • ThePixelDetectorisexposedtothe harshestcondiFons • 4silicondetectorlayers Atrue4-hitpixelsystem! InsertableB-Layer(IBL)installedin2014 Workshop física teórica UVA - Sonia Fernandez-Perez 10 IntroducFonThePixelDetector • ThePixelDetectorisexposedtothe harshestcondiFons • 4silicondetectorlayers • Eachlayeriscomposedof 2Dsegmentedsilicondetectors Workshop física teórica UVA - Sonia Fernandez-Perez 11 IntroducFonParFcle’strackingdetectors • Layersofsegmentedsilicondetectors • TheenergylossbytheparFclewhiletraversingthedetectoràelectricalsignal proton proton Workshop física teórica UVA - Sonia Fernandez-Perez 12 IntroducFonParFcle’strackingdetectors • Layersofsegmentedsilicondetectors • TheenergylossbytheparFclewhiletraversingthedetectoràelectricalsignal Position sensitive layers proton proton Workshop física teórica UVA - Sonia Fernandez-Perez 13 IntroducFonParFcle’strackingdetectors • Layersofsegmentedsilicondetectors • TheenergylossbytheparFclewhiletraversingthedetectoràelectricalsignal Position sensitive layers proton proton Workshop física teórica UVA - Sonia Fernandez-Perez 14 IntroducFonParFcle’strackingdetectors • Layersofsegmentedsilicondetectors • TheenergylossbytheparFclewhiletraversingthedetectoràelectricalsignal Position sensitive layers proton proton Workshop física teórica UVA - Sonia Fernandez-Perez 15 IntroducFonSignalgeneraFononsilicondetectors • pixel sensor: a 2D segmented pn-diode (reversely bias à depletion zone) pn-junc;on Workshop física teórica UVA - Sonia Fernandez-Perez 16 IntroducFonSignalgeneraFononsilicondetectors • pixel sensor: a 2D segmented pn-diode (reversely bias à depletion zone) pn-junc;on Reverselybiaspn-junc;on Workshop física teórica UVA - Sonia Fernandez-Perez 17 2 2 10 MHz/mm 1 MHz/mm IntroducFonSignalgeneraFononsilicondetectors 1 Grad 50 Mrad 2 ⇥ 1016 neq cm 2 1 ⇥ 1015 neq cm 2 • pixel sensor: bias à depletion zone) 2 a 2D segmented pn-diode (reversely 2 ⇡1 m zone is the zone⇡10 20charge m carriers • Depletion without-free 200 0V 0V 0V the ATLAS Pixel Detector for the+ LHC and for the HL-LHC. + + n n n ed in this table are extracted from. W W = p+ s d 2✏✏0 (V0 q|Nef f | Vb ) p bulk (0.1) Vb p W = 2 ✏ µ ⇢ Vb 1 µ q |Nef f | (0.2) Nef f = Nd Na (0.3) Workshop física teórica UVA - Sonia Fernandez-Perez 18 2 2 10 MHz/mm 1 MHz/mm IntroducFonSignalgeneraFononsilicondetectors 1 Grad 50 Mrad 2 ⇥ 1016 neq cm 2 1 ⇥ 1015 neq cm 2 • pixel sensor: bias à depletion zone) 2 a 2D segmented pn-diode (reversely 2 ⇡1 m zone is the zone⇡10 20charge m carriers • Depletion without-free 200 0V 0V 0V 0V the ATLAS Pixel Detector for the+ LHC and for the HL-LHC.+ + + n n n n ed in this table are extracted from. - + - + - + - + W W = p+ s d 2✏✏0 (V0 q|Nef f | Vb ) p bulk (0.1) p+ 0V n+ depleted p bulk Vb Vb p W = 2 ✏ µ ⇢ Vb 1 µ q |Nef f | increasing bias voltage 0V n+ Nef f = Nd • AparFcletraversingthesensor (0.2) generateselectron-holepairs • SignalgeneraFonàdriTanddiffusion • ATLASrequirements:driT • ThesignalisamplifiedanddigiFzed inaR/Ochip (0.3) Na Workshop física teórica UVA - Sonia Fernandez-Perez 19 LHCpixeldetectors • Verygoodperformanceandreliabilitysince2009 • NotsufficientforlongtermLHCplansofluminosityincrease Workshop física teórica UVA - Sonia Fernandez-Perez 20 IntroducFonHighLuminosityLHC • Whydoweneedhighluminosity? frequencytoobtainanspecificevent: Nevent = Luminosity x σevent σ (pp) = 1011 pb σ (W/Z) = 104 pb σ (H) = 100 pb Workshop física teórica UVA - Sonia Fernandez-Perez 21 IntroducFonHighLuminosityLHC • Whydoweneedhighluminosity? frequencytoobtainanspecificevent: Nevent = Luminosity x σevent σ (pp) = 1011 pb σ (W/Z) = 104 pb σ (H) = 100 pb • TheLHCplanstoincreasebyafactorof7theluminosityin2026àHL-LHCprogram [luminosityof7*1034cm-2s-1,collisionenergyof14TeV, and25nsbunchcrossing] DetectorimplicaFons: • RadiaFonharddetectors • Highrate • Fastdetectors Workshop física teórica UVA - Sonia Fernandez-Perez 22 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Workshop física teórica UVA - Sonia Fernandez-Perez 23 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Workshop física teórica UVA - Sonia Fernandez-Perez 24 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Hybridtechnology Hybridtechnology PlanarPixelSensor(PPS) PlanarPixelSensor(PPS) 3DSiliconsensor(3D) Workshop física teórica UVA - Sonia Fernandez-Perez 25 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Hybridtechnology Hybridtechnology PlanarPixelSensor(PPS) PlanarPixelSensor(PPS) 3DSiliconsensor(3D) Innerlayers 1. Radia;onhardness 2. Lowpowerconsump;on 3. Lowmaterial 4. Occupancy 26 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Hybridtechnology Hybridtechnology PlanarPixelSensor(PPS) PlanarPixelSensor(PPS) 3DSiliconsensor(3D) Outerlayers Innerlayers 1. ;meschedule 1. Radia;onhardness 2. Lowpowerconsump;on 2. Lowcost 3. LowpowerconsumpFon 3. Lowmaterial 4. Lowmaterial 4. Occupancy Workshop física teórica UVA - Sonia Fernandez-Perez 27 IntroducFonTheATLASInnerTracKer(ITk) • ThefullInnerDetectorofATLASwillbereplacedbyanewall-silicondetector • PixelsandStrips • ThePixelDetectorlayoutisunderdiscussion(4-6layers) • Therequirementsareatleastoneorderofmagnitudehigher Hybridtechnology Hybridtechnology PlanarPixelSensor(PPS) PlanarPixelSensor(PPS) 3DSiliconsensor(3D) Outerlayers Innerlayers 1. ;meschedule 1. Radia;onhardness 2. Lowpowerconsump;on 2. Lowcost 3. LowpowerconsumpFon 3. Lowmaterial 4. Lowmaterial 4. Occupancy Workshop física teórica UVA - Sonia Fernandez-Perez 28 PixeldevelopmentsforATLASatHL-LHC.FromHybrid detectorstodepletedMonolithicdetectors Workshop física teórica UVA - Sonia Fernandez-Perez 29 Hybriddetectortechnologies Hybrid pixels • Sensor+front-endchipseparatedenFFes • SignalcollectedbydriT • Maturetechnology(inusesinceLEP1996) Workshop física teórica UVA - Sonia Fernandez-Perez 30 Hybriddetectortechnologies Hybrid pixels • Sensor+front-endchipseparatedenFFes • SignalcollectedbydriT • Maturetechnology(inusesinceLEP1996) Advantages • Complexsignalprocessingalready inpixelcellpossible • • • zerosuppression,temporarystorage ofhitsduringL1latency RadiaFonhardto>1015neq/cm2 Highratecapability(~MHz/mm2) Workshop física teórica UVA - Sonia Fernandez-Perez 31 Hybriddetectortechnologies Hybrid pixels • Sensor+front-endchipseparatedenFFes • SignalcollectedbydriT • Maturetechnology(inusesinceLEP1996) Advantages • Complexsignalprocessingalready inpixelcellpossible • • • zerosuppression,temporarystorage ofhitsduringL1latency RadiaFonhardto>1015neq/cm2 Highratecapability(~MHz/mm2) Disadvantages • ComplexandlaboriousmoduleproducFon • • • • ManyproducFonstepsàlowproducFonyield Bump-bonding/flip-chippingàlimiFngpixelsize Expensive RelaFvelylargematerialbudget~3%Xoperlayer • • sensor+chip+flexkapton+passivecomponents support,cooling,services Workshop física teórica UVA - Sonia Fernandez-Perez 32 Hybridsensorstechnologies PlanarPixelSensor(PPS) § TechnologyusedinpresentPixelDetector § CollecFondistance=driTdistance § HighproducFonyield(%) • Largeareasensors n+-readout n-bulk - -+ -+ + -+ +-+ + -+ guard rings p+-bias Workshop física teórica UVA - Sonia Fernandez-Perez 33 Hybridsensorstechnologies PlanarPixelSensor(PPS) 3DSiliconSensor(3D) § TechnologyusedinpresentPixelDetector § CollecFondistance=driTdistance § HighproducFonyield(%) • Largeareasensors § TechnologyinstalledforthefirstFmeIBL § CollecFon-anddriTdistancedisconnected § MoredifficultproducFon,loweryield • Smallerareasensors n+-readout n-bulk - -+ -+ + -+ +-+ -+ -+ + -+ p-bulk + -+ + - -+ guard rings p+-bias guard rings rings guard Workshop física teórica UVA - Sonia Fernandez-Perez + +-biaspillars pp+-bias 34 10 MHz/mm 1 MHz/mm CMOSPixelTechnologies 1 Grad 50 Mrad 2 ⇥ 1016 neq cm 2 1 ⇥ 1015 neq cm ⇡1 m2 pixels ⇡10 - 20 m2 CMOS-based • Industrialprocess 200 - 2 • higherproducFonyield • cheapersensors he ATLAS Pixel Detector for the LHC and for the HL-LHC. • this CollecFngelectrodeinsideàlogicimplementaFoninsamesiliconFle d in table are extracted from. àcapaciFvecoupledconnecFons,monolithic… • smallercost • ssmallermaterialbudget 2✏✏0 • smallerpixelsize W = (V0 Vb ) q|Nef f | • Therearetwoapproaches p W = 2 ✏ µ ⇢ Vb à HV-CMOS à HR-CMOS (0.1) (0.2) • Bothtechnologiesaredevelopedsofarashybridapproach 1 Nef f = Nd Na (0.3) µ q |Nef f | Workshop física teórica UVA - Sonia Fernandez-Perez 35 10 MHz/mm 1 MHz/mm CMOSPixelTechnologies 1 Grad 50 Mrad 2 ⇥ 1016 neq cm 2 1 ⇥ 1015 neq cm ⇡1 m2 pixels ⇡10 - 20 m2 CMOS-based • Industrialprocess 200 - 2 • higherproducFonyield • cheapersensors he ATLAS Pixel Detector for the LHC and for the HL-LHC. • this CollecFngelectrodeinsideàlogicimplementaFoninsamesiliconFle d in table are extracted from. àcapaciFvecoupledconnecFons,monolithic… • smallercost • ssmallermaterialbudget 2✏✏0 • smallerpixelsize W = (V0 Vb ) q|Nef f | • Therearetwoapproaches p W = 2 ✏ µ ⇢ Vb à HV-CMOS à HR-CMOS (0.1) (0.2) • Bothtechnologiesaredevelopedsofarashybridapproach 1 Nef f = Nd Na (0.3) µ q |Nef f | Workshop física teórica UVA - Sonia Fernandez-Perez 36 Monolithic Active Pixel Sensors MAPS epitaxial layer • • • • • ALICE ITS (L. Mussa) ComplexR/Oelectronicsinsensorlayer needed. HighresisFvityepitaxiallayer SlowchargecollecFon(diffusion) “low”radiaFonhardness STAR(2014),ALICEITS(2018) Workshop física teórica UVA - Sonia Fernandez-Perez 37 Monolithic Active Pixel Sensors MAPS epitaxial layer • • • • • ALICE ITS (L. Mussa) STAR/RHIC ComplexR/Oelectronicsinsensorlayer needed. HighresisFvityepitaxiallayer SlowchargecollecFon(diffusion) “low”radiaFonhardness STAR(2014),ALICEITS(2018) ALICEUpgrade 38 Monolithic Active Pixel Sensors MAPS epitaxial layer ComplexR/Oelectronicsinsensorlayer needed. HighresisFvityepitaxiallayer SlowchargecollecFon(diffusion) “low”radiaFonhardness STAR(2014),ALICEITS(2018) • • • • • ALICE ITS (L. Mussa) Depleted MAPS • • • • ComplexR/Oelectronicsinsensorlayer needed. Highvoltage/highresisFvityprocess FastchargecollecFon(driT) [BELLEIIDEPFET] Workshop física teórica UVA - Sonia Fernandez-Perez 39 Monolithic Active Pixel Sensors MAPS epitaxial layer • • • • • ALICE ITS (L. Mussa) Depleted MAPS ComplexR/Oelectronicsinsensorlayer needed. HighresisFvityepitaxiallayer SlowchargecollecFon(diffusion) “low”radiaFonhardness STAR(2014),ALICEITS(2018) BelleII(SuperKEK) 40 Depleted Monolithic Active Pixel Sensors Depleted MAPS Silicon-On-Insulator 0V VDD N N P P • Buried Oxide (BOX) Collecting electrode Si-bulk • Silicon-On-Insulatortoseparatelogicfromsensor diode.Severaladvantages: • Decouplingofelectronicsandsensorsilicon resisFvity • NocompeFngNWELL • Freechoiceoffillfactor • Lowercross-talk ChargecollecFonbydriT Workshop física teórica UVA - Sonia Fernandez-Perez 41 Depleted Monolithic Active Pixel Sensors Depleted MAPS Silicon-On-Insulator 0V 0V VDD N N P N P N P VDD P Buried Oxide (BOX) ~µm Collecting electrode Buried Oxide (BOX) CollecFngelectrode Si-bulk Si bulk Thick film Standard • • • • Distancetransistors-BOX~nm Ultra-thintransistorbody~O(40nm)FD RadiaFonhardnessverychallenging OKI/LAPIS • Distancetransistors-BOX~µm • ThicktransistorbodyPD • MulFple“wells”structures Workshop física teórica UVA - Sonia Fernandez-Perez 42 Summaryofpixeldevelopmentsfeatures Hybrid CMOSpixels MonolithicCMOS Examples 3D,Planar (ATLAS,CMS, LHCvelo,Timepix3) HV-CMOS HR-CMOS MAPS(STAR,ALICEITS) DMAPSSOI Technology Industrystandard R/Oandsensors forreadout;special integrated,closeto high-Ωsensors industrialprocess R/Oandsensorinsame pieceofsilicon; Industrialprocess InterconnecFon Bump-bonding required ConnecFvity facilitated(CCPD)(or monolithicapproach) Noneeded Granularity 50μmx50μm Downtofew-micron sizes Downtofew-micron sizes Timing Fast Coarsebutimproving Coarsebutimproving RadiaFon hardness Feasible Tobeproven Tobeproven 43 Summaryofpixeldevelopmentsfeatures Hybrid CMOSpixels MonolithicCMOS Examples 3D,Planar (ATLAS,CMS, LHCvelo,Timepix3) HV-CMOS HR-CMOS MAPS(STAR,ALICEITS) DMAPSSOI Technology Industrystandard R/Oandsensors forreadout;special integrated,closeto high-Ωsensors industrialprocess R/Oandsensorinsame pieceofsilicon; Industrialprocess InterconnecFon Bump-bonding required ConnecFvity facilitated(CCPD)(or monolithicapproach) Noneeded Granularity 50μmx50μm Downtofew-micron sizes Downtofew-micron sizes Timing Fast Coarsebutimproving Coarsebutimproving RadiaFon hardness Feasible Tobeproven Tobeproven 44 Summaryofpixeldevelopmentsfeatures Hybrid CMOSpixels MonolithicCMOS Examples 3D,Planar (ATLAS,CMS, LHCvelo,Timepix3) HV-CMOS HR-CMOS MAPS(STAR,ALICEITS) DMAPSSOI Technology Industrystandard R/Oandsensors forreadout;special integrated,closeto high-Ωsensors industrialprocess R/Oandsensorinsame pieceofsilicon; Industrialprocess InterconnecFon Bump-bonding required ConnecFvity facilitated(CCPD)(or monolithicapproach) Noneeded Granularity 50μmx50μm Downtofew-micron sizes Downtofew-micron sizes Timing Fast Coarsebutimproving Coarsebutimproving RadiaFon hardness Feasible Tobeproven Tobeproven 45 hMp://visits.web.cern.ch Workshop física teórica UVA - Sonia Fernandez-Perez 46 hMp://jobs.web.cern.ch Workshop física teórica UVA - Sonia Fernandez-Perez 47 ThankforyouraIenFon 48 Spareslides 49 LINAC2:50MeV ProtonSynchrotronBooster(PSB):1.4GeV ProtonSyncrotron(PS):25GeV SuperProtonSyncrotron(SPS):450GeV 50 51 ParFclecollidersrequirements [SlidebyN.Wermes,Elba2015] 52 [SlidebyL.Linssen,FinalTALENTConference] 53 IntroducFonParFcle’strackingdetectors • Layersofsegmentedsilicondetectors • TheenergylossbytheparFclewhiletraversingthedetectoràelectricalsignal • ThelossofenergybychargedparFclesinmaIeràinelasFccollisions Chargedpar;cles(m>>me) • ExcitaFonandionizaFonofatoms • Partoftheenergyistransferredtotheatom • Bethe-Blochformula Chargedpar;cles(m~me) • IonizaFonofatoms+other • AthighenergiesàBremsstrahlungdominates MIP (Minimum IonizaFon ParFcle) 54 Transversemomentumresolu;on VertexandImpactParameterresolu;on 55 Requirementstodesignatrackingdetector 56 CMOSPixelTechnologies HV-CMOS • HVtechnology(100V) • Logicin-sensor • Twoapproaches • Bump-bondedtodedicatedR/Ochip • CapaciFvecouplingviaisolaFngglue • Provenupto • • • • 1GRadTID,1015neqcm-2 99%(96%)efficiencybefore(aTer)irr depleFondepth10-20μmat100V signalrise-Fme100ns HR-CMOS • HighresisFvitysubstrate(1-2KΩcm) • TwovariantsarebeinginvesFgated • differentgeometries • Twoapproaches • Bump-bondedtodedicatedR/Ochip • Monolithic • Provenupto • DepleFon60μmat20V(6200e-) • Rise-Fmewithin25ns(thresholddependency) • AHV-CMOSprototypein350nmproduced • AHR-CMOSprototypein150nmselected inlargescale(2x2cm) àproducFoninlargescale(2x2cm) 57 XTB01 prototype HVring 25x25μm2 AU25/50grid (matrix25/50) n-wellring 50x50μm2 AU50V2grid (matrix50) 100x100μm2 AU100grid (matrix100) 0V P NWELL PWELL double PWELL BOX N N P P NWELL PWELL double PWELL BOX deep NWELL e ee- HV grid DTI N P DTI VDD N HV grid DTI (Pixel cross section. No to scale) teststructures P bulk • 2x5mm2 • 300μmthick • 4metallayers,wafersize:8“ • Fourmatriceswithdifferentpixelsizes (25x25μm2,50x50μm2,100x100μm2) • Transistorteststructures • HVring,gridrings,n-rings • thickfilmDMAPSSOI 0.18µm • BOXisolatessensorand electronics • thickfilm,doublePWELL • noback-processing(HV appliedfromfrontside) • MIPdetecFon 58
